Blank Cover Image

2DEGs And 2DHGs Induced By Spontaneous And Piezoelectric Polarization In AlGaN/GaN Heterostructures

Author(s):
Ambacher, Oliver
Link, Angela
Hackenbuchner, Stefan
Stutzmann, M.
Dimitrov, Roman
Murphy, Michael
Smart, Joe
Shealy, Jim R.
Green, Bruce
Schaff, William J.
Eastman, Les F.
6 more
Publication title:
Wide-bandgap electronic devices
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
622
Pub. Year:
2001
Page(from):
T5.10
Pub. info.:
Warrendale, PA.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995307 [1558995307]
Language:
English
Call no.:
M23500/622
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings The influence of spontaneous and piezoelectric polarization on novel AlGaN/GaN/InGaN device structures

Foutz, B. E., Murphy, M. J., Ambacher, O., Tilak, V., Smart, J. A., Shealy, J. R., Schaff, W. J., Eastman, L. F.

MRS-Materials Research Society
7 Conference Proceedings Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures

Link, A., Ambacher, O., Smorchkova, I.P., Mishra, U.K., Speck, J.S., Stutzmann, M.

Trans Tech Publications
2 Conference Proceedings Lateral Polarity Heterostructures By Overgrowth Of Patterned AlxGa1-xN Nucleation Layers

Dimitrov, Roman, Tilak, V., Murphy, M., Schaff, W.J., Eastman, L.F., Lima, A.P., Miskys, C., Ambacher, O., Stutzmann, M.

Materials Research Society
8 Conference Proceedings AlGaN/GaN Piezoelectric HEMT's with Submicron Gates on Sapphire

Chu, K., Smart, J.A., Shealy, J.R., Eastman, L.

Electrochemical Society
3 Conference Proceedings Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy

Murphy, M. J., Foutz, B. E., Chu, K., Wu, H., Yeo, W., Schaff, W. J., Ambacher, O., Eastman, L. F., Eustis, T. J., …

MRS - Materials Research Society
9 Conference Proceedings Novel AlGaN Heterostructures for UV Sensors and LEDs

STUTZMANN, M.

Kluwer Academic Publishers
4 Conference Proceedings Polarization Induced 2D Hole Gas in GaN/AlGaN Heterostructures

Hackenbuchner, S., Majewski, J. A., Zandler, G., Ambacher, O., Vogl, P.

Materials Research Society
10 Conference Proceedings Spin Resonance investigations of GaN and AlGaN

Reinacher, N. M., Angerer, H., Ambacher, O., Brandt, M. S., Stutzmann, M.

MRS - Materials Research Society
5 Conference Proceedings Electronic And Sensors Based on Pyroelectonic AlGaN/GaN Heterostructures

Ambacher, O., Eickhoff, M., Steinhoff, G., Hermann, M., Gorgens, L., Weiss, V., Baur, B., Stutzmann, M, Neuberger, R., …

Electrochemical Society
11 Conference Proceedings Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

Lu, Hai, Schaff, William J., Eastman, Lester F., Wood, Colin

Materials Research Society
6 Conference Proceedings Electric And Morphology Studies Of Ohmic Contacts On AlGaN/GaN

Tilak, Vinayak, Dimitrov, R., Murphy, M., Green, B., Smart, J., Schaff, W.J., Shealy, J.R., Eastman, L.F.

Materials Research Society
12 Conference Proceedings Improved Aluminum Nitride Thin Films Grown by MOCVD From Tritertiarybutylaluminum and Ammonia

Metzger, T., Born, E., Stommer, R., Rieger, W., Dimitrov, R., Lentz, D., Angerer, H., Ambacher, O., Stutzmann, M.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12