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The Physical and Electrical Properties of Polycrystalline Si1-xGex as a Gate Electrode Material for ULSI CMOS Structures

Author(s):
Kang, Sung-Kwan
Ko, Dae-Hong
Ahn, Tae-Hang
Joo, Moon-Sik
Yeo, In-Seok
Whoang, Sung-Jin
Yang, Doo-Young
Whang, Chul-Joo
Lee, Hoo-Jeong
4 more
Publication title:
Gate stack and silicide issues in silicon processing : symposium held April 25-27, 2000, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
611
Pub. Year:
2001
Page(from):
C7.1
Pub. info.:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558995192 [1558995196]
Language:
English
Call no.:
M23500/611
Type:
Conference Proceedings

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