Molybdenum As A Gate Electrode For Deep Sub-Micron CMOS Technology

Molybdenum As A Gate Electrode For Deep Sub-Micron CMOS Technology

Author(s):

Ranade, Pusnkar

Publication title:

Gate stack and silicide issues in silicon processing : symposium held April 25-27, 2000, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

611

Pub. Year:

2001

Page(from):

C3.2

Pub. info.:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558995192 [1558995196]

Language:

English

Call no.:

M23500/611

Type:

Conference Proceedings

Details

TDL ID:	ZA00014199
Series ID:	PA00000011
Conf. info. (Name):	Symposium on gate stack and silicide issues in silicon processing
Conf. info. (Number):	2000
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2000.04.25-2000.04.27

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