The Source Of Transient Enhanced Diffusion In Sub-KeV Implanted Boron In Crystalline Silicon

The Source Of Transient Enhanced Diffusion In Sub-KeV Implanted Boron In Crystalline Silicon

Author(s):

Napolitani, Enrico

Publication title:

Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

610

Pub. Year:

2001

Page(from):

B5.2

Pub. info.:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558995185 [1558995188]

Language:

English

Call no.:

M23500/610

Type:

Conference Proceedings

Details

TDL ID:	ZA00014198
Series ID:	PA00000011
Conf. info. (Name):	Symposium on Si front-end processing
Conf. info. (Number):	2nd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2000.04.24-2000.04.27

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