Blank Cover Image

Junctions For Deep Sub-100 Nm MOS: How Far Will Ion Implantation Take Us?

Author(s):
Publication title:
Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
610
Pub. Year:
2001
Page(from):
B1.2
Pub. info.:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558995185 [1558995188]
Language:
English
Call no.:
M23500/610
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Can DUV take us below 100 nm?

Finders,J., Jorritsma,L., Eurlings,M., Moerman,R., Greevenbroek,H.van, Schoot,J.B.van, Flagello,D.G., Socha,R.J., …

SPIE-The International Society for Optical Engineering
7 Conference Proceedings Reverse Diode Leakage in Spike-Annealed Ultra-Shallow Junctions

Gossmann, Hans.-Joachim L., Feng, Tao, Aditya, Agarwal, Frisella, Peter, Rubin, Leonard M.

Materials Research Society
2 Conference Proceedings Antimony Clustering Due To High-Dose Implantation

Kalyanaraman, Ramki, Haynes, Tony E., Venezia, Vincent C., Jacobson, Dale C., Gossmann, Hans J., Rafferty, Conor S.

Materials Research Society
8 Conference Proceedings The Gate Stack/Shallow Junction Challenge for Sub-100 nm Technology Generations *

Huff, H.R., Brown, G.A., Larson, L.A.

Electrochemical Society
3 Conference Proceedings Sub-100-nm and deep sub-100-nm MOS transistor gate patterning

Xiang,Q., Gupta,S., Spence,C.A., Singh,B., Yeap,G.C.-F., Lin,M.-R.

SPIE-The International Society for Optical Engineering
9 Conference Proceedings Improvement of pattern collapse in sub-100 nm nodes

Jung, M.-H., Lee, S.-H., Kim, H.-W., Woo, S.-G., Cho, H.-K., Han, W.-S.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings Shallow Boron Implant Activation

Fiory, A. T., Bourdelle, K. K., Agarwal, A., Gossmann, H-J., Rafferty, C. S.

MRS - Materials Research Society
10 Conference Proceedings * Sub-100 nm Gate Stack/Ultra Shallow Junction Integration Challenges

Huff, H.R., Brown, G.A., Larson, L.A., Murto, R.W.

Electrochemical Society
5 Conference Proceedings Ultra-Shallow Junctions by Ion Implantation and Rapid Thermal Annealing: Spike-Anneals, Ramp Rate Effects

Agarwal, A., Gossmann, H-J., Fiory, A. T.

MRS - Materials Research Society
11 Conference Proceedings Influence of Flouring and BF2 Implants on the Transient Enhanced Diffusion of Boron

Vuong, H-H., Gossmann, H.-J., Rafferty, C.S., Luftman, H.S., Unterwald, F.C., Jacobson, D.C., Ahrens, R.E, Boone, T., …

Electrochemical Society
6 Conference Proceedings Ultra-Shallow Junction Formation Using Ion Implantation and Rapid Thermal Annealing: Physical and Practical Limits

Agarwal, A., Gossmann, H.-J.L., Fiory, A.T., Venezia, V.C., Jacobson, D.C.

Electrochemical Society
12 Conference Proceedings Implant Dose and Spike Anneal Temperature Relationships

Bourdelle, K.K., Fiory, A.T., Gossmann, H.-J. L., McCoy, S.P.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12