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Why SiNx:H is the Preferred Gate Dielectric for Amorphous Si Thin-Film Transistors (TFTs) and SiO2 is the Preferred Gate Dielectric for Polycrystalline Si TFTs

Author(s):
Phillips, G. LucovskyJ. C.  
Publication title:
Flat-panel displays and sensors - principles, materials and processes : symposium held April 4-9, 1999, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
558
Pub. Year:
2000
Page(from):
135
Page(to):
142
Pages:
8
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558994652 [1558994653]
Language:
English
Call no.:
M23500/558
Type:
Conference Proceedings

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