Collection Efficiencies Greater than Unity by Electron or Hole Gating in a-Si:H p-i-n Diodes

Collection Efficiencies Greater than Unity by Electron or Hole Gating in a-Si:H p-i-n Diodes

Author(s):

Publication title:

Amorphous and heterogeneous silicon thin films : fundamentals to devices - 1999 : symposium held April 5-9, 1999, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

557

Pub. Year:

1999

Page(from):

475

Page(to):

482

Pages:

8

Pub. info.:

Warrendale: Materials Research Society

ISSN:

02729172

ISBN:

9781558994645 [1558994645]

Language:

English

Call no.:

M23500/557

Type:

Conference Proceedings

Details

TDL ID:	ZA00014188
Series ID:	PA00000011
Conf. info. (Name):	Symposium on amorphous and heterogeneous silicon thin films
Conf. info. (Number):	1999
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1999.04.05-1999.04.09

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