Growth of High Quality GaAs Epitaxial Layers on Si Substrate by using Novel GeSi Buffer Structure

Growth of High Quality GaAs Epitaxial Layers on Si Substrate by using Novel GeSi Buffer Structure

Author(s):

Publication title:

Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2004-02

Pub. Year:

2004

Page(from):

95

Page(to):

99

Pages:

5

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774079 [1566774071]

Language:

English

Call no.:

E23400/961823

Type:

Conference Proceedings

Details

TDL ID:	ZA00014176
Series ID:	PA00000028
Conf. info. (Name):	State-Of-The-Art Program on Compound Semiconductors - SOTAPOCS ; Narrow Bandgap Optoelectronic Materials and Devices Symposium ; Meeting of the Electrochemical Society
Conf. info. (Number):	40th ; 2nd ; 205th
Conf. info. (Venue):	San Antonio, TX, USA
Conf. info. (Date):	2004.05.09-2004.05.14

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