GaN-based Optoelectronic Devices on Si Grown by MOCVD

GaN-based Optoelectronic Devices on Si Grown by MOCVD

Author(s):

Publication title:

Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2004-02

Pub. Year:

2004

Page(from):

34

Page(to):

38

Pages:

5

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774079 [1566774071]

Language:

English

Call no.:

E23400/961823

Type:

Conference Proceedings

Details

TDL ID:	ZA00014176
Series ID:	PA00000028
Conf. info. (Name):	State-Of-The-Art Program on Compound Semiconductors - SOTAPOCS ; Narrow Bandgap Optoelectronic Materials and Devices Symposium ; Meeting of the Electrochemical Society
Conf. info. (Number):	40th ; 2nd ; 205th
Conf. info. (Venue):	San Antonio, TX, USA
Conf. info. (Date):	2004.05.09-2004.05.14

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