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a-Si:H TFTs with a Graded Gate SiNx Dielectric Structure - Interfacial Layer Thickness Effects and Characterization

Author(s):
Publication title:
Proceedings of the Second Symposium on Thin Film Transistor Technologies
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
1994-35
Pub. Year:
1994
Page(from):
41
Page(to):
51
Pages:
11
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770941 [1566770947]
Language:
English
Call no.:
E23400/950720
Type:
Conference Proceedings

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