The Influence of a Si δ-Doped Layer in an AlGaAs/GaAs Heterostructure on the Damage Introduced by CH4/H2/Ar ECR Plasma Etching

The Influence of a Si δ-Doped Layer in an AlGaAs/GaAs Heterostructure on the Damage Introduced by CH4/H2/Ar ECR Plasma Etching

Author(s):

Publication title:

Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI)

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1994-34

Pub. Year:

1994

Page(from):

123

Page(to):

131

Pages:

9

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770934 [1566770939]

Language:

English

Call no.:

E23400/950719

Type:

Conference Proceedings

Details

TDL ID:	ZA00014143
Series ID:	PA00000028
Conf. info. (Name):	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
Conf. info. (Number):	21st ; 186th
Conf. info. (Venue):	Miami Beach, FL, USA
Conf. info. (Date):	1994.10.09-1994.10.14

Similar Items:

1 Conference Proceedings New Process Technique of AlGaAs/GaAs Wet Chemically Etched Mirror Lasers Karouta, F., van den Heuvel, H.H.P.M., van Hassel, J.G., Wellen, J.S., Smalbrugg, E., Stegeman, J.A.A., Kaufmann, … Electrochemical Society	7 Conference Proceedings ELECTRON-BEAM-INDUCED DAMAGE IN GaAs/AlGaAs HETEROSTRUCTURES Tanaka, N., Kawanishi, H., Ishikawa, T. Materials Research Society
2 Conference Proceedings DAMAGE INTRODUCED BY CH4/H2 REACTIVE ION ETCHING IN PSEUDOMORPHIC AlGaAs/InGaAs MODFETs Pereira, R., Van Hove, M., De Raedt, W., Van Hoof, C., Broghs, G., Van Rossum, M., Braspenning, R. H., Eijkemans, T. J., … Materials Research Society	8 Conference Proceedings CH4:H2:Ar rf/ECR PLASMA ETCHING OF GaAs AND InP Law, Victor J., Ingram, S. G., Jones, G. A. C., Grimwood, R. C., Royal, H. Materials Research Society
3 Conference Proceedings GaAs/AlGaAs structures with δ-doped layer for microwave detection A. Suziedelis, V. Petkun, A. Kozic, V. Kazlauskaite, A. Cerskus, G. Steikunas, J. Gradauskas, J. Kundrotas, S. Asmontas, … SPIE - The International Society of Optical Engineering	9 Conference Proceedings Layer disordering and carrier concentration in heavily carbon-doped AlGaAs/GaAs superlattices You, H. M., Tan, T. Y., Gosele, U. M., Hofler, G. E., Hsieh, K. C., Holonyak, N., Jr., Lee, S. -T. MRS - Materials Research Society
4 Conference Proceedings ECR Ar/CH4/H2 plasma damage in HgCdTe Kim, E.T., Han, M.S., Kwon, J.H., Hahn, S.R., Song, K.H., Lee, S.G., Lee, T.S., Lee, Y.S., Kim, J.M. SPIE	10 Conference Proceedings Etching of SiC with Fluorine ECR Plasma Foerster, Ch., Cimalla, V., Kosiba, R., Ecke, G., Weih, P., Ambacher, O., Pezoldt, J. Trans Tech Publications
5 Conference Proceedings Low Damage And Selective Etching of GaAs Using BCl3/SF6 Gas in ECR Plasma Oikawa, H., Kohno, M., Mochizuki, A., Nashimoto, Y. Electrochemical Society	11 Conference Proceedings Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches Benson, J.D., Stoltz, A.J., Jr., Kaleczyc, A.W., Martinka, M., Almeida, L.A., Boyd, P.R., Dinan, J.H. SPIE-The International Society for Optical Engineering
6 Conference Proceedings ECR Plasma Etching of GaAs in CCI2F2/Ar Discharge Singh, L.S.S., Tiwary, K.P., Khan, M.N., Purohit, R.K., Zaidi, Z.H. SPIE-The International Society for Optical Engineering	12 Conference Proceedings A Study of Highly Selective Oxide Etching by ECR Plasma Katayama, K., Hisada, M., Nakamura, S., Fujiwara, H. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12