Comparison of Oxide Breakdown Mechanism Due to D-Defects and Oxygen Precipitates

Comparison of Oxide Breakdown Mechanism Due to D-Defects and Oxygen Precipitates

Author(s):

Park, J.G.

Publication title:

Proceedings of the Symposium on Diagnostic Techniques for Semiconductor Materials and Devices

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1994-33

Pub. Year:

1994

Page(from):

53

Page(to):

64

Pages:

12

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770927 [1566770920]

Language:

English

Call no.:

E23400/951106

Type:

Conference Proceedings

Details

TDL ID:	ZA00014142
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Diagnostic Techniques for Semiconductor Materials and Devices ; Electrochemical Society Meeting
Conf. info. (Number):	3rd ; 1994
Conf. info. (Venue):	Miami Beach, FL, USA
Conf. info. (Date):	1994.10.10-1994.10.12

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