Reaction Analysis For Tetraethoxysilane And Ozone Atmospheric Pressure Chemical Vapor Deposition Doped Oxides

Reaction Analysis For Tetraethoxysilane And Ozone Atmospheric Pressure Chemical Vapor Deposition Doped Oxides

Author(s):

Publication title:

Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1994-16

Pub. Year:

1994

Page(from):

559

Page(to):

569

Pages:

11

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770484 [1566770483]

Language:

English

Call no.:

E23400/942240

Type:

Conference Proceedings

Details

TDL ID:	ZA00014125
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Conf. info. (Number):	3rd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1994.05.23-1994.05.27

Similar Items:

1 Conference Proceedings Step Coverage Simulation for TEOS/03 Atmospheric Pressure CVD Fujino, K., Egashira, Y., Shimogaki, Y., Komiyama, H. Electrochemical Society	7 Conference Proceedings Elementary Reaction Simulation of Al-CVD Using Dimethyl Aluminum Hydride Sugiyama, M., Nakajima, T., Tanaka, T., Itoh, H., Aoyama, J., Egashira, Y., Yamashita, K., Komiyama, H., Shimogaki, Y. Electrochemical Society
2 Conference Proceedings Ozone Chemistry in Atmospheric Pressure Chemical Vapor Deposition of Silicon Dioxide Using Tetraethoxysilane and Ozone Ikeda, K., Maeda, M. Electrochemical Society	8 Conference Proceedings A Design Policy of the SiC CVD Reactor Based on the Chemical Reaction Kinetics of Dichlodimethylsilane Takeuchi, T., Egashira, Y., Komiyama, H. Electrochemical Society
3 Conference Proceedings Effect of Fluorine Addition to Plasma-Enhanced Chemical Vapor Deposition Silicon Oxide Film Lim, S. W., Miyata, M., Naito, T., Shimogaki, Y., Nakano, Y., Tada, K., Komiyama, H. MRS - Materials Research Society	9 Conference Proceedings A Kinetic Study of CVD-WSix Processes. The Comparison of WF6/SiH4 and WF6/Si2H6 Processes Saito, T., Oshima, K., Egashira, Y., Shimogaki, Y., Komiyama, H., Sugarwara, K. Electrochemical Society
4 Conference Proceedings Sensitive Analysis of Deposition Chemistry of Cu From (hfac)Cu(tmvs) Using Well-Characterized Test Structure Chae, Y. K., Shimogaki, Y., Komiyama, H. MRS - Materials Research Society	10 Conference Proceedings Theoretical Optimization of Al-CVD using Elementary Reaction Simulation Sugiyama, M., Iino, T., Nakajima, T., Tanaka, T., Itoh, H., Aoyama, J., Egashira, Y., Yamashita, K., Komiyama, H., … Electrochemical Society
5 Conference Proceedings Theoretical Reactor Design from the Simple Tubular Reactor Analysis for WSix CVD Process Chae, Y. K., Egashira, Y., Shimogaki, Y., Sugawara, K., Komiyama, H. MRS - Materials Research Society	11 Conference Proceedings DEPOSITION OF FLUORINE DOPED TUNGSTEN OXIDE THIN FILMS BY ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION Proscia, James W., Winter, Charles H., Reck, Gene P., Wen, Gang Gang Materials Research Society
6 Conference Proceedings Particle Growth Mechanism of Aluminum Nitride Prepared by Chemical Vapor Deposition Method Kim, H. J., Egashira, Y., Komiyama, H., Sadakata, M. American Institute of Chemical Engineers	12 Conference Proceedings Computer-Aided Reaction Design (CARD) to Investigate the Control of SIH4/O2 CVD by Gas-Phase Additives Takahashi, T., Hagiwara, K., Egashira, Y., Komiyama, H. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12