THE EFFECT OF DISSOLVED OXYGEN AND DISSOLVED OZONE IN ULTRAPURE WATER ON N+ DOPED POLY- CRYSTALLINE SILICON TO N+ DOPED CRYSTALLINE SILICON CONTACT RESISTANCE

THE EFFECT OF DISSOLVED OXYGEN AND DISSOLVED OZONE IN ULTRAPURE WATER ON N+ DOPED POLY- CRYSTALLINE SILICON TO N+ DOPED CRYSTALLINE SILICON CONTACT RESISTANCE

Author(s):

Publication title:

Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1994-7

Pub. Year:

1994

Page(from):

125

Page(to):

131

Pages:

7

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770385 [1566770386]

Language:

English

Call no.:

E23400/941397

Type:

Conference Proceedings

Details

TDL ID:	ZA00014117
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Cleaning Technology in Semiconductor Device Manufacturing ; Electrochemical Society Fall Meeting
Conf. info. (Number):	3rd ; 1993
Conf. info. (Venue):	New Orleans, Louisiana, USA
Conf. info. (Date):	1993.10.15-1993.10.20

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