N2O-Based Gate Dielectrics for ULSI Applications

N2O-Based Gate Dielectrics for ULSI Applications

Author(s):

Publication title:

Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1994-1

Pub. Year:

1994

Page(from):

25

Page(to):

35

Pages:

11

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770378 [1566770378]

Language:

English

Call no.:

E23400/941393

Type:

Conference Proceedings

Details

TDL ID:	ZA00014111
Series ID:	PA00000028
Conf. info. (Name):	Symposium on the Degradation of Electronic Devices Due to Device Operation as Well as Crystalline and Process-Induced Defects
Conf. info. (Number):	1993
Conf. info. (Venue):	New Orleans, LA, USA
Conf. info. (Date):	1993.10.11-1993.10.13

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