Strain Reduction in GaAs Epilayers on Si by the Control of Thermally Introduced Misfit Dislocations
- Author(s):
- Publication title:
- Proceedings of the Symposium on Logic and Functional Devices for Photonics and the seventeenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVII)
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 1993-10
- Pub. Year:
- 1993
- Page(from):
- 237
- Page(to):
- 245
- Pages:
- 9
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566770545 [1566770548]
- Language:
- English
- Call no.:
- E23400/932025
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
THE NUCLEATION AND PROPAGATION OF MISFIT DISLOCATIONS NEAR THE CRITICAL THICKNESS IN Ge-Si STRAINED EPILAYERS
Materials Research Society |
Plenum Press |
8
Conference Proceedings
STRAIN RELIEF MERCHANISM AND NATURE OF MISFIT DISLOCATION IN GaAS/Si HETEROSTRUCTURES
Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
4
Conference Proceedings
Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC
Trans Tech Publications |
10
Conference Proceedings
Spatial Confinement of Misfit Dislocations at the Interfaces of Epitaxial CdSe/GaAs(111)and ZnTe/GaAs(111)studied by TEM
Trans Tech Publications |
Trans Tech Publications |
11
Conference Proceedings
DISLOCATION DENSITY REDUCTION IN GaAs EPILAYERS ON Si USING STRAINED LAYER SUPERLATTICES
Materials Research Society |
Plenum Press |
12
Conference Proceedings
CALCULATION OF SLIP LENGTH IN 300 mm SILICON WAFERS DURING THERMAL PROCESSES
Electrochemical Society |