Barrier Thickness Dependence of InGaAs/In(GaAs)P Strained Multi-Quantum-Well Structure

Barrier Thickness Dependence of InGaAs/In(GaAs)P Strained Multi-Quantum-Well Structure

Author(s):

Publication title:

Proceedings of the Symposium on Logic and Functional Devices for Photonics and the seventeenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVII)

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1993-10

Pub. Year:

1993

Page(from):

209

Page(to):

211

Pages:

3

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770545 [1566770548]

Language:

English

Call no.:

E23400/932025

Type:

Conference Proceedings

Details

TDL ID:	ZA00014099
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Logic and Functional Devices for Photonics ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
Conf. info. (Number):	1992 ; 17th ; 182nd
Conf. info. (Venue):	Toronto, Ontario, Canada
Conf. info. (Date):	1992.10.11-1992.10.16

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