A PHENOMENOLOGICAL MODEL FOR DAMAGE-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IS SILICON

A PHENOMENOLOGICAL MODEL FOR DAMAGE-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IS SILICON

Author(s):: Morehead, F.F.
Publication title:: Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology
Title of ser.:: Electrochemical Society Proceedings Series
Ser. no.:: 1993-6
Pub. Year:: 1993
Page(from):: 34
Page(to):: 45
Pages:: 12
Pub. info.:: Pennington, NJ: Electrochemical Society
ISSN:: 01616374
ISBN:: 9781566770644 [1566770645]
Language:: English
Call no.:: E23400/930578
Type:: Conference Proceedings

Details

TDL ID:	ZA00014095
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Process Physics and Modeling in Semiconductor Technology ; Spring Meeting of the Electrochemical Society
Conf. info. (Number):	3rd ; 1993
Conf. info. (Venue):	Honolulu, Hawaii. USA
Conf. info. (Date):	1993.05.19-1993.05.21

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