Sticking Probability of the Film Precursor in Epitaxial Growth of SiC Films by Chemical Vapor Deposition from SiH4 and C3H8

Sticking Probability of the Film Precursor in Epitaxial Growth of SiC Films by Chemical Vapor Deposition from SiH4 and C3H8

Author(s):

Publication title:

Proceedings of the Twelfth International Symposium on Chemical Vapor Deposition

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1993-2

Pub. Year:

1993

Page(from):

401

Page(to):

407

Pages:

7

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770743 [1566770742]

Language:

English

Call no.:

E23400/930161

Type:

Conference Proceedings

Details

TDL ID:	ZA00014091
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Chemical Vapor Deposition
Conf. info. (Number):	12th
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	1993.05.00

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