Epitaxial Growth of SiC on Sapphire Substrates With an AIN Buffer Layer

Epitaxial Growth of SiC on Sapphire Substrates With an AIN Buffer Layer

Author(s):

Publication title:

Proceedings of the Twelfth International Symposium on Chemical Vapor Deposition

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1993-2

Pub. Year:

1993

Page(from):

214

Page(to):

220

Pages:

7

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770743 [1566770742]

Language:

English

Call no.:

E23400/930161

Type:

Conference Proceedings

Details

TDL ID:	ZA00014091
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Chemical Vapor Deposition
Conf. info. (Number):	12th
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	1993.05.00

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