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Experimental Study on Silicon Epitaxial Growth Mechanism by a Fast Wafer-Rotating Chemical Vapor Deposition Reactor

Author(s):
Publication title:
Proceedings of the Twelfth International Symposium on Chemical Vapor Deposition
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
1993-2
Pub. Year:
1993
Page(from):
134
Page(to):
140
Pages:
7
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770743 [1566770742]
Language:
English
Call no.:
E23400/930161
Type:
Conference Proceedings

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