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Sub-30 nm Abrupt Junction Formation in Strained Si/Si 1-xGe x, CMOS Device

Author(s):
Lee, K.L.
Cardone, F.
Saunders, P.
Kozlowski, P.
Ronsheim, P.
Zhu, H.
Li, J.
Chu, J.
Chan, K.
Ieong, M.
5 more
Publication title:
Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-01
Pub. Year:
2004
Page(from):
71
Page(to):
81
Pages:
11
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774062 [1566774063]
Language:
English
Call no.:
E23400/200401
Type:
Conference Proceedings

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