EFFECT OF RIE SEQUENCE AND POST-RIE SURFACE PROCESSING ON THE RELIABILITY OF GATE OXIDE lN A TRENCH
- Author(s):
Grebs, T. Ridley, R. Chang, K. Wu, C.-T. Agarwal, R. Mytych, J. Dimachkie, W. Dolny, G. Michalowicz, J. Ruzyllo, J. - Publication title:
- Cleaning technology in semiconductor device manufacturing VIII : proceedings of the international symposium
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 2003-26
- Pub. Year:
- 2003
- Page(from):
- 108
- Page(to):
- 115
- Pages:
- 8
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566774116 [156677411X]
- Language:
- English
- Call no.:
- E23400/200326
- Type:
- Conference Proceedings
Similar Items:
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
8
Conference Proceedings
Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide
Trans Tech Publications |
Electrochemical Society |
Electrochemical Society |
4
Conference Proceedings
The Effect of Carbon in Silicon on Oxidation Kinetics and Silicon Dioxide Integrity
Electrochemical Society |
Electrochemical Society |
5
Conference Proceedings
Q BD Healing Effect by Post-Gate-Oxidation DI Water Spraying at PBLOCOS Edge
Electrochemical Society |
Electrochemical Society |
6
Conference Proceedings
EFFECT OF SILICON SURFACE CONDITION ON FILM FORMATION USING MIST DEPOSITION
Electrochemical Society |
12
Conference Proceedings
STUDY OF THE EFFECT OF SILICON SURFCE TREATMENT ON EOT IN HIGH-k DIELECTRIC MOS GATE STACK
Electrochemical Society |