ATOMIC LAYER DEPOSITION OF SILICON NITRIDE BARRIER LAYER FOR SELF-ALIGNED GATE STACK

ATOMIC LAYER DEPOSITION OF SILICON NITRIDE BARRIER LAYER FOR SELF-ALIGNED GATE STACK

Author(s):

Publication title:

Cleaning technology in semiconductor device manufacturing VIII : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-26

Pub. Year:

2003

Page(from):

86

Page(to):

92

Pages:

7

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774116 [156677411X]

Language:

English

Call no.:

E23400/200326

Type:

Conference Proceedings

Details

TDL ID:	ZA00014088
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Cleaning Technology in Semiconductor Device Manufacturing ; Fall Meeting of the Electrochemical Society
Conf. info. (Number):	8th ; 2003
Conf. info. (Venue):	Orlando, Florida, USA
Conf. info. (Date):	2003.10.00

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