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Examine incorporation of nitrogen in Hf silicate silicate by post-deposition NH3 annealing.

Author(s):
Senzaki  
Publication title:
Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2003-22
Pub. Year:
2003
Page(from):
259
Page(to):
266
Pages:
8
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774055 [1566774055]
Language:
English
Call no.:
E23400/200322
Type:
Conference Proceedings

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