Characteristics of HfO2 films deposited by ALD, using a metal nitrite precursor, obtained from C-V, l-V, TEM, XRD, and ellipsometry

Characteristics of HfO2 films deposited by ALD, using a metal nitrite precursor, obtained from C-V, l-V, TEM, XRD, and ellipsometry

Author(s):: Conley
Publication title:: Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues
Title of ser.:: Electrochemical Society Proceedings Series
Ser. no.:: 2003-22
Pub. Year:: 2003
Page(from):: 175
Page(to):: 186
Pages:: 12
Pub. info.:: Pennington, NJ: Electrochemical Society
ISSN:: 01616374
ISBN:: 9781566774055 [1566774055]
Language:: English
Call no.:: E23400/200322
Type:: Conference Proceedings

Details

TDL ID:	ZA00014085
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on High Dielectric Constant Materials ; Meeting of the Electrochemical Society
Conf. info. (Number):	2nd ; 204th
Conf. info. (Venue):	Orlando, FL, USA
Conf. info. (Date):	2003.10.12-2003.10.16

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