49 Silicon damage and dopant behaviour studies of rapid thermally processed arsenic-implanted silicon

49 Silicon damage and dopant behaviour studies of rapid thermally processed arsenic-implanted silicon

Author(s):

Publication title:

Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-14

Pub. Year:

2003

Page(from):

397

Page(to):

404

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773966 [1566773962]

Language:

English

Call no.:

E23400/200314

Type:

Conference Proceedings

Details

TDL ID:	ZA00014078
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Advanced short-time thermal processing for Si-based CMOS devices ; Meeting of the Electrochemical Society
Conf. info. (Number):	2003 ; 203rd
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	2003.04.27-2003.04.30

Similar Items:

1 Conference Proceedings THE INFLUENCE OF DEPOSITION CONDITIONS SON THE PROPERTIES OF a-SiC:H THIN FILMS Magafas, L., Girginoudi, D., Georgoulas, N,, Thanailakis, A. Materials Research Society	7 Conference Proceedings HEATING RATE EFFECTS IN RAPID THERMAL ANNEALING OF ARSENIC IMPLANTED SILICON Souza, J. P. de, Fichtner, P. F. P., Sadana, D. K. MRS - Materials Research Society
2 Conference Proceedings NUCLEATION AND CRYSTALLIZATION OF AMORPHOUS SILICON-ALUMINUM THIN FILMS Lin, F., Hatalis, M. K., Girginoudi, S., Girginoudi, D., Georgoulas, N., Thanailakis, A. Materials Research Society	8 Conference Proceedings THE NATURE OF ELECTRICALLY INACTIVE IMPLANTED ARSENIC IN SILICON AFTER RAPID THERMAL ANNEALING Altrip, John L., Evans, Alan G. R., Young, Nigel D., Logan, John R. Materials Research Society
3 Conference Proceedings ELECTRONIC PROPERTIES OF SPUTTERED a-Si1-xSnx:H ALLOYS AND COMPARISON WITH ELECTRONIC STRUCTURE CALCULATIONS Girginoudi, D., Georgoulas, N., Thanailakis, A., Zdetsis, A.D., Kiriakidis, G., Christou, A. Materials Research Society	9 Conference Proceedings Stress Enhanced Arsenic Diffusion in Titanium Salicided Junctions by Implantation into C49 TiSi2 and Rapid Thermal Annealing Sohn, D. K., Park, J-S., Bae, J-U., Huh, Y-J., Park, J. W. MRS - Materials Research Society
4 Conference Proceedings ELECTRICAL AND OPTICAL PROPERTIES OF AMORPHOUS Si1-xSnx: H STRUCTURES Girginoudi, D., Thanailakis, A., Christou, A. Materials Research Society	10 Conference Proceedings Influence of Lattice Defects Produced by Ion Implantation on Electrical and Optical Properties of Bulk-Barrier-Diodes Georgoulas N. Martinus Nijhoff Publishers
5 Conference Proceedings Rapid Thermal Processing of contacts and buffer layers for compound semiconductor device technology Feng T., Christou A., Girginoudi D., Hatzopoulos Z. Kluwer Academic Publishers	11 Conference Proceedings CHARACTERIZATION OF ARSENIC-IMPLANTED AMORPHOUS SILICON Knoch, L., Theodore, N.D., Tam, G., Pennell, R. Materials Research Society
6 Conference Proceedings ARSENIC REDISTRIBUTION AND OUTDIFFUSION IN IMPLANTED CZOCHRALSKI-GROWN P-TYPE SILICON DURING RAPID THERMAL ANNEALING Chaussemy, G., Canut, B., Kumar, S. N., Barbier, D., Laugier, A. Materials Research Society	12 Conference Proceedings METASTABLE ACTIVATION IN RAPID THERMAL ANNEALED ARSENIC IMPLANTED SILICON Kamgar, A., Baiocchi, F.A. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12