Porous SiOCH Modification Studies Induced by Ashing Processes

Porous SiOCH Modification Studies Induced by Ashing Processes

Author(s):

Publication title:

Thin film materials, processes, and reliability, plasma processing for the 100 nm node and copper interconnects with low-k inter-level dielectric films : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-13

Pub. Year:

2003

Page(from):

66

Page(to):

72

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773935 [1566773938]

Language:

English

Call no.:

E23400/200313

Type:

Conference Proceedings

Details

TDL ID:	ZA00014077
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Thin Film Materials, Processes, and Reliability ; Meeting of the Electrochemical Society
Conf. info. (Number):	2003 ; 203rd
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	2003.04.27-2003.05.02

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