High Perfon-nance AIGaN/GaN HEMTs with Recessed Gate
- Author(s):
Sano, Yoshiaki Kaifu, Katsuaki Mita, Juro Okita, Hideyuki Sagimori, Tomohiko Ushikubo, Takashi Ishikawa, Hiroyasu Egawa, Takashi Jimbo, Takashi - Publication title:
- State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 2003-11
- Pub. Year:
- 2003
- Page(from):
- 298
- Page(to):
- 305
- Pages:
- 8
- Pub. info.:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773911 [1566773911]
- Language:
- English
- Call no.:
- E23400/200311
- Type:
- Conference Proceedings
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