Growth and Characterization of High-Ge Content SiGe Virtual Substrates

Growth and Characterization of High-Ge Content SiGe Virtual Substrates

Author(s):

Erdtmann, M.

Publication title:

State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-11

Pub. Year:

2003

Page(from):

106

Page(to):

117

Pages:

12

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773911 [1566773911]

Language:

English

Call no.:

E23400/200311

Type:

Conference Proceedings

Details

TDL ID:	ZA00014075
Series ID:	PA00000028
Conf. info. (Name):	State-Of-The-Art Program on Compound Semiconductors - SOTAPOCS ; Symposium on Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics ; Meeting of the Electrochemical Society
Conf. info. (Number):	39th ; 4th ; 204th
Conf. info. (Venue):	Orlando, Florida, USA
Conf. info. (Date):	2003.10.12-2003.10.17

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