A study on selective Si0.8Ge0.2 etch using polysilicon etchant diluted by H20 for three-dimensional Si structure application

A study on selective Si0.8Ge0.2 etch using polysilicon etchant diluted by H20 for three-dimensional Si structure application

Author(s):

Publication title:

Silicon-on-insulator technology and devices XI : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-5

Pub. Year:

2003

Page(from):

81

Page(to):

86

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773751 [156677375X]

Language:

English

Call no.:

E23400/200305

Type:

Conference Proceedings

Details

TDL ID:	ZA00014068
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
Conf. info. (Number):	11th ; 203rd
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	2003.04.28-2003.05.02

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