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Characteristics of Sulfur and InGaP-passivated InGaPlGaAs Heteroj unction Bipolar Transistors

Author(s):
Publication title:
State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2003-4
Pub. Year:
2003
Page(from):
28
Page(to):
32
Pages:
5
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773492 [1566773490]
Language:
English
Call no.:
E23400/200304
Type:
Conference Proceedings

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