Direct Observation of Substitutional and Interstitial Iron Atoms in Silicon by High-Temperature and In-Beam Moessbauer Spectroscopy

Direct Observation of Substitutional and Interstitial Iron Atoms in Silicon by High-Temperature and In-Beam Moessbauer Spectroscopy

Author(s):: Yoshida, Y.
Publication title:: Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and the 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah
Title of ser.:: Electrochemical Society Proceedings Series
Ser. no.:: 2003-3
Pub. Year:: 2003
Page(from):: 479
Page(to):: 492
Pages:: 14
Pub. info.:: Pennington, NJ: Electrochemical Society
ISSN:: 01616374
ISBN:: 9781566773485 [1566773482]
Language:: English
Call no.:: E23400/200303
Type:: Conference Proceedings

Details

TDL ID:	ZA00014066
Series ID:	PA00000028
Conf. info. (Name):	ALTECH ; Meeting of the Electrochemical Society ; Symposium M1, Diagnostic Techniques for Semiconductor Materials and Devices ; Meeting of the Electrochemical Society
Conf. info. (Number):	4th (2003) ; 203rd ; 2002 ; 202nd
Conf. info. (Venue):	Paris, France ; Paris, France ; Salt Lake City, UT, USA ; Salt Lake City, UT, USA
Conf. info. (Date):	2003.04.27-2003.05.02 ; 2003.04.27-2003.05.02 ; 2002.10.21-2002.10.25 ; 2002.10.21-2002.10.25

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