New Method for Accurate Determination of the Electric Field Enhancement in Junctions - Theoretical Model and Applications to STI Diodes With High Fields

New Method for Accurate Determination of the Electric Field Enhancement in Junctions - Theoretical Model and Applications to STI Diodes With High Fields

Author(s):

Publication title:

High purity silicon VII : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2002-20

Pub. Year:

2002

Page(from):

278

Page(to):

289

Pages:

12

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773447 [156677344X]

Language:

English

Call no.:

E23400/200220

Type:

Conference Proceedings

Details

TDL ID:	ZA00014053
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
Conf. info. (Number):	7th ; 202nd
Conf. info. (Venue):	Salt Lake City, Utah, USA
Conf. info. (Date):	2002.10.20-2002.10.25

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