Diode Analysis of Deep Submicron CMOS P-Well Implantation Damage

Diode Analysis of Deep Submicron CMOS P-Well Implantation Damage

Author(s):

Publication title:

High purity silicon VII : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2002-20

Pub. Year:

2002

Page(from):

266

Page(to):

277

Pages:

12

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773447 [156677344X]

Language:

English

Call no.:

E23400/200220

Type:

Conference Proceedings

Details

TDL ID:	ZA00014053
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
Conf. info. (Number):	7th ; 202nd
Conf. info. (Venue):	Salt Lake City, Utah, USA
Conf. info. (Date):	2002.10.20-2002.10.25

Similar Items:

1 Conference Proceedings Impact of STI Width and Spacing on the Stress Generation in Deep Submicron CMOS Poyai, A., Rittaporn, I., Simoen, E., Claeys, C., Rooyackers, R. Electrochemical Society	7 Conference Proceedings Impact of the Generation Width on the Lifetime Extraction in Cz Siliconp-n Junction Diodes Czerwinski, A., Simoen, E., Poyai, A., Claeys, C. Electrochemical Society
2 Conference Proceedings Lifetime and Leakage Current Studies in Shallow P-N Junctions Fabricated in a Deep High-Energy Boron Implanted P-Well Poyai,A., Simoen,E., Claeys,C., Rooyackers,R., Badenes,G., Gaubas,E. Electrochemical Society, SPIE-The International Society for Optical Engineering	8 Conference Proceedings New Method for Accurate Determination of the Electric Field Enhancement in Junctions - Theoretical Model and Applications to STI Diodes With High Fields Czerwinski, A., Simoen, E., Poyai, A., Claeys, C. Electrochemical Society
3 Conference Proceedings Impact of Thermal Budget on Junction Leakage in a 0.18 and 0.13 μm CMOS Technology Poyai, A., Simoen, E., Claeys, C., Rooyackers, R., Redolfi, A. Electrochemical Society	9 Conference Proceedings Radiation damage in deep submicron partially depleted SOI CMOS Simoen, E., Rafi, J.M., Mercha, A., Serra-Gallifa, X., van Meer, H., De Meyer, K., Claeys, C., Kokkoris, M., … Electrochemical Society
4 Conference Proceedings The effect of substrate radiation-induced defects on the operation of deep submicron silicon technologies Simoen, E., Claeys, C., Poyai, A. Electrochemical Society	10 Conference Proceedings Diode Analysis of Silicon Substrate Quality Sitnoen,E., Poyai,A., Claeys,C. SPIE - The International Society for Optical Engineering
5 Conference Proceedings Potential and Pitfalls of the Diode Characterization Technique for ULSI Device Analysis Poyai, A., Simoen, E., Claeys, C. SPIE-The International Society for Optical Engineering	11 Conference Proceedings 1/f noise in deep-submicron CMOS technology for RF and analog applications (Invited Paper) Mercha, A., Simoen, E., Decoutere, S., Claeys, C. SPIE - The International Society of Optical Engineering
6 Conference Proceedings Lifetime and Leakage Current Studies in Shallow P-N Junctions Poyai, A., Simoen, E., Claeys, C., Rooyackers, R., Badenes, G., Gaubas, E. Electrochemical Society	12 Conference Proceedings Potential and Pitfalls of the Diode Characterization Technique for ULSI Device Analysis Poyai, A., Sitnoen, E., Claeys, C. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12