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Ultra-Shallow Junctions in Si 1-x Ge x Formed by Molecular-Beam Epitaxy

Author(s):
Publication title:
Rapid thermal and other short-time processing technologies III : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2002-11
Pub. Year:
2002
Page(from):
381
Page(to):
388
Pages:
8
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773348 [1566773342]
Language:
English
Call no.:
E23400/200211
Type:
Conference Proceedings

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