Molecular Beam Deposition of Alternate Gate Dielectrics for Si CMOS

Molecular Beam Deposition of Alternate Gate Dielectrics for Si CMOS

Author(s):

Publication title:

Rapid thermal and other short-time processing technologies III : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2002-11

Pub. Year:

2002

Page(from):

137

Page(to):

144

Pages:

8

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773348 [1566773342]

Language:

English

Call no.:

E23400/200211

Type:

Conference Proceedings

Details

TDL ID:	ZA00014045
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Rapid Thermal and Other Short-Time Processing Technologies ; Meeting of the Electrochemical Society
Conf. info. (Number):	3rd ; 201st
Conf. info. (Venue):	Philadelphia, Pennsylvania, USA
Conf. info. (Date):	2002.05.13-2002.05.16

Similar Items:

1 Conference Proceedings Epitaxial Si Films Grown on Lattice Matched (LaxY1-x)O3/Si (111) Structures by Molecular Beam Epitaxy Narayanan, V., Guha, S., Bojarczuk, N. A., Copel, M. Materials Research Society	7 Conference Proceedings Characterization of Bulk and Interface Properties of Dielectric Layers and Stacks Okorn-Schmidt, H.F., Gusev, E.P., Buchanan, D.A., Cartier, E., Guha, S., Bojarczuk, N.A., Rath, D.L., Callegari, A., … Electrochemical Society
2 Conference Proceedings Recent Advances in Search for Suitable High-k/Metal Gate Solutions to Replace SiON/Poly-Silicon Gate Stacks in CMOS Devices for 45nm and Beyond Technologies B. Linder, V. Paruchuri, V. Narayanan, E. Cartier, N. Bojarczuk, S. Guha, S. Brown, Y. Wang Electrochemical Society	8 Conference Proceedings Electrical Characteristics of Metal-(La0.27Y0.73)2O3-Silicon Capacitors Preisler, E. J., Bojarczuk, N. A., Guha, S. Materials Research Society
3 Conference Proceedings Charge Defects, Vt Shifts, and the Solution to the High-K Metal Gate n-MOSFET Problem S. Guha, V. Narayanan, V. Paruchuri, B. Linder, M. Copel, N. Bojarczuk, Y. Kim, M. Chudzik, Y. Wang, P. Ronsheim Electrochemical Society	9 Conference Proceedings High Quality Silicon Oxide Dielectric Films By Molecular Beam Deposition Chand, Naresh, Kola, R.R., Opila, R.L., Comizzoli, R.B., Krautter, H., Chu, S.N.G., Osenbach, J.W. Electrochemical Society
4 Conference Proceedings Materials Interaction at the Nanoscale in High-k Metal Gate Stacks: The Role of Oxygen S. Guha, E. Preisler, N. Bojarczuk, M. Copel Electrochemical Society	10 Conference Proceedings High-k Materials for Advanced Gate Stack Dielectrics: A Comparison of ALCVD and MOCVD as Deposition Technologies Caymax, Matty, Bender, H., Brijs, B., Conard, T., Gendt, S. De, Delabie, A., Heyns, M., Onsia, B., Ragnarsson, L., … Materials Research Society
5 Conference Proceedings Gallium-nitride-based LEDs on silicon substrates Bojarczuk,N.A., Guha,S. SPIE - The International Society for Optical Engineering	11 Conference Proceedings DyScHfOx as High-k Gate Dielectrics: Structural and Electrical Properties C. Adelmann, S. Van Elshocht, P. Lehnen, T. Canard, A. Franquet, C. Zhao, L. Ragnarsson, V. Chang, H. Choi, Y. Hong-Yu, … Electrochemical Society
6 Conference Proceedings Laser Assisted Molecular Beam Deposition of Thin Films for Gate Dielectrics Applications DeLeon, Robert L., Garvey, James F., Tompa, Gary S., Moore, Richard, Efstathiadis, Harry Materials Research Society	12 Conference Proceedings Gate Quality AlO3 by Molecular-Atomic-Deposition (MAD) and its Potential Applications in III-V Semiconductor CMOS Technology S. Cui, N. Li, J. Zheng, S. Shim, T. Ma Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12