MOCVD Growth of n-AlxGa1-xN
- Author(s):
- Publication title:
- State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 2002-3
- Pub. Year:
- 2002
- Page(from):
- 141
- Page(to):
- 149
- Pages:
- 9
- Pub. info.:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773690 [1566773695]
- Language:
- English
- Call no.:
- E23400/2002-3
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Optical Absorption of Nitrogen Vacancy in Proton Irradiated AlxGa1-xN Thin Films
Materials Research Society |
7
Conference Proceedings
In-Plane Optical Anisotropies of AlxGa1-xN Films in Their Regions of Transparency
MRS - Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
3
Conference Proceedings
Growth via MOCVD and Characterization of GaN and AlxGa1-xN(0001) Alloys for Optoelectric and Microelectronic Device Applications
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
MRS-Materials Research Society |
10
Conference Proceedings
Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlattices
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
6
Conference Proceedings
Effect of the Inter-Subband Scattering in Modulation-Doped AlxGa1-xN/GaN Heterostructures
Materials Research Society |
12
Conference Proceedings
Quaternary InAIGaN-based multiquantum wells for ultraviolet light-emitting diode application
SPIE-The International Society for Optical Engineering |