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Er-doped GaN Grown By Molecular Beam Epitaxy

Author(s):
Ng, H.M  
Publication title:
State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2002-3
Pub. Year:
2002
Page(from):
64
Page(to):
69
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773690 [1566773695]
Language:
English
Call no.:
E23400/2002-3
Type:
Conference Proceedings

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