INVITED: GETTERING EFFICIENCIES AND THEIR DEPENDENCE ON MATERIAL PARAMETERS AND THERMAL PROCESS: HOW CAN THIS BE MODELED?

INVITED: GETTERING EFFICIENCIES AND THEIR DEPENDENCE ON MATERIAL PARAMETERS AND THERMAL PROCESS: HOW CAN THIS BE MODELED?

Author(s):

Publication title:

Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2002-2

Pub. Year:

2002

Page(from):

608

Page(to):

625

Pages:

18

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773744 [1566773741]

Language:

English

Call no.:

E23400/2002-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00014035
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon Materials Science and Technology
Conf. info. (Number):	9th
Conf. info. (Venue):	Philadelphia, PA, USA
Conf. info. (Date):	2002.05.13-2002.05.17

Similar Items:

1 Conference Proceedings INVITED: GETTERING EFFICIENCIES AND THEIR DEPENDENCE ON MATERIAL PARAMETERS AND THERMAL PROCESS: HOW CAN THIS BE MODELED? HoeIzl, R., Blietz, M., Fabry, L., Schmolke, R. Electrochemical Society	7 Conference Proceedings Advanced Silicon Wafers for 0.18 μm Design Rule and Beyond: Epi and fFLASH!* Schmolke, R., Blietz, M., Schauer, R., Zemke, D., Oelkrug, H., Ammon, W.v., Lambert, U., Grtlf, D. Electrochemical Society
2 Conference Proceedings BULK MICRO DEFECTS OF P/P- EPITAXIAL SILICON WITH WAFERS WITH NITROGEN DOPED SUBSTRATES AND THEIR GETTERING BEHAVIOR Schmolke, R., Blietz, M., Hoelzl, R., Menzel, D., Bender, H. Electrochemical Society	8 Conference Proceedings Advanced Silicon Wafers for 0.18 μm Design Rule and Beyond: Epi and fFLASH! Schmolke,R., Blietz,M., Schauer,R., Zemke,D., Oelkrug,H., Ammon,W.v., Lambert,U., Graf,D. Electrochemical Society, SPIE-The International Society for Optical Engineering
3 Conference Proceedings WITH WAFERS WITH NITROGEN DOPED SUBSTRATES AND THEIR GETTERING BEHAVIOR Sebmolke, R., Blietz, M., Hoelzl, R., Menzel, D., Bender, H. Electrochemical Society	9 Conference Proceedings CAN THE STRENGTH OF BRITTLE MATERIALS BE ENHANCED? Monette, L., Anderson, M.P., Grest, G.S. Materials Research Society
4 Conference Proceedings Influence of Boron Doping on Oxide Precipitate Nucleation and Gettering of Iron Impurities in Low Thermal Budget Processing of Czochralski Silicon Kissinger, G., Vanhellemont, J., Morgenstern, G., Blietz, M., Tittelbach-Helmrich, K., Obermejer, G., Wahlich, R. Electrochemical Society	10 Conference Proceedings INVITED: SCIENCE AND MODELING OF IMPURITY GETTERING IN SILICON Tan, T.Y., Gafiteanu, R., Joshi, S.M., Goesele, U.M. Electrochemical Society
5 Conference Proceedings Free Calcium in Red Blood Cells of Human Hypertensives in Elevated : How Can This Be ? Vincenzi F. F., Hinds R. T., Lindner A. Springer-Verlag	11 Conference Proceedings How Rapid Isothermal processing Can Be a Dominant Semiconductor Processing Technology in the 21st Century Singh, R., Sharangpani, R., Cherukuri, K. C., Chen, Y., Dawson, D. W., Poole, K. F., Rohatgi, A., Narayanan, S., Thakur, … MRS - Materials Research Society
6 Conference Proceedings How Conceptual Design of Chemical Processes Can Be a Computer Aid James M. Douglas American Institute of Chemical Engineers	12 Conference Proceedings Can Microwave-Assisted Reactions and Processes be Qualified and Validated? M. Nüchter, B. Ondruschka, R. Bierbaum, D. Weiâ, R. Beckert American Institute of Chemical Engineers

1

2

3

4

5

6

7

8

9

10

11

12