Radiation-induced defects in Ge- and Sn-doped N-Type Si

Radiation-induced defects in Ge- and Sn-doped N-Type Si

Author(s):: Larsen, A.Nylandsted
Publication title:: Crystalline defects and contamination: their impact and control in device manufacturing III : DECON 2001 : proceedings of the Satellite Symposium to ESSDERC 2001, Nuremberg, Germany
Title of ser.:: Electrochemical Society Proceedings Series
Ser. no.:: 2001-29
Pub. Year:: 2001
Page(from):: 68
Page(to):: 74
Pages:: 7
Pub. info.:: Pennington, N.J.: Electrochemical Society
ISSN:: 01616374
ISBN:: 9781566773638 [1566773636]
Language:: English
Call no.:: E23400/200129
Type:: Conference Proceedings

Details

TDL ID:	ZA00014033
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Crystalline Defects and Contamination - DECON ; European Solid State Device Research Conference - ESSDERC
Conf. info. (Number):	3rd (2001) ; 31st (2001)
Conf. info. (Venue):	Nuremberg, Germany
Conf. info. (Date):	2001.09.11-2001.09.13

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