Factors Affecting Stress-Induced Defect Generation in Trenched SOI for High-Voltage Applications

Factors Affecting Stress-Induced Defect Generation in Trenched SOI for High-Voltage Applications

Author(s):

Publication title:

Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2001-27

Pub. Year:

2001

Page(from):

232

Page(to):

241

Pages:

10

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773607 [1566773601]

Language:

English

Call no.:

E23400/200127

Type:

Conference Proceedings

Details

TDL ID:	ZA00014031
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Semiconductor Wafer Bonding ; Fall Meeting of the Electrochemical Society
Conf. info. (Number):	6th ; 2001
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2001.09.00

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