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MOCVD Grown InGaAsN Using efficent and Novel Precursor, Tertibutylhydrazine, for optoelectronic device applications. (Invited)

Author(s):
Li, N.V.
Sharps, P.R.
Newman, F.
Chang, P.C.
Baca, A.G.
Hou, H.Q.
1 more
Publication title:
State-of-the-art-program on compound semiconductors (STAPOCS XXXV) : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2001-20
Pub. Year:
2001
Page(from):
17
Page(to):
22
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773539 [1566773539]
Language:
English
Call no.:
E23400/200120
Type:
Conference Proceedings

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