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TaOxNy Gate Dielectric For ULSI MOS Device Applications

Author(s):
Publication title:
Semiconductor technology (ISTC 2001) : proceedings of the 1st International Conference on Semiconductor Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2001-17
Pub. Year:
2001
Page(from):
328
Page(to):
335
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773508 [1566773504]
Language:
English
Call no.:
E23400/200117
Type:
Conference Proceedings

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