Blank Cover Image

The Characteristics of Metal Gate MOS With Improved Sputtering Process For Gate Electrode

Author(s):
Publication title:
Semiconductor technology (ISTC 2001) : proceedings of the 1st International Conference on Semiconductor Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2001-17
Pub. Year:
2001
Page(from):
127
Page(to):
134
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773508 [1566773504]
Language:
English
Call no.:
E23400/200117
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Analytic Description of Sidewall Thickness Effects in THE Self-Aligned Double Gates MOSFET

Huaxiang, Yin, Qiuxia, Xu

Electrochemical Society
7 Conference Proceedings IMPACT OF OXYGEN DURING POST-GATE PROCESSING ON MOS DEVICE CHARACTERISTICS

Lee, Steven S., Lo, G. Q., Kwong, D. L.

Materials Research Society
2 Conference Proceedings Dielectric Evolution Characteristics of HhCN Metal Electrode Gated MOS Stacks

W. Wang, T. Nabatame, Y. Shimogaki

Electrochemical Society
8 Conference Proceedings THE EFFECT OF RAPID THERMAL PROCESSING ON THE ELECTRICAL CHARACTERISTICS OF POLYSILICON GATE MOS CAPACITORS

Felch, Susan B., Hodul, David T., Salimian, Mak

Materials Research Society
3 Conference Proceedings Section V MOS Gate Stacks with High-k Dielectrics and Metal Gate Electrodes

Electrochemical Society
9 Conference Proceedings 33 ALD of Advanced High-k and Metal Gate Stacks for MOS Devices

Gutt, J., Gopalan, S., Brown, G. A., Kirsch, P. D., Peterson, J. J., Gardner, M., Li, H.-J., Lysaght, P., Alshareef, H. …

Electrochemical Society
4 Conference Proceedings Improvement in Fermi-Level Pinning of p-MOS Metal Gate Electrodes on HfSiON by Employing Ru Gate Electrodes

M. Kadoshima, Y. Sugita, K. Shiraishi, H. Watanabe, A. Ohta

Electrochemical Society
10 Conference Proceedings Flat-Band Voltage Shift of MOS Capacitors With Tantalum Nitride Gate Electrodes Induced by Post Metallization Annealing

Kadoshima, M., Yamamoto, K., Fujiwara, H., Akiyama, K., Tominaga, K., Yamagishi, N., Iwamoto, K., Ohno, M., Yasuda, T., …

Materials Research Society
5 Conference Proceedings Characteristics of Metal Gate MOS Capacitor with Hafnium Oxynitride Thin Film

Choi, K.-J., Yoon, S.-G.

Electrochemical Society
11 Conference Proceedings Section IV Advanced MOS Gate Electrodes

Electrochemical Society
6 Conference Proceedings Integration of Hfx Tay N Metal Gate Electrode with High-k Gate Dielectric in MOS Devices

K. Chang-Liao, C. Cheng, T. Wang, Y. Wang

Electrochemical Society
12 Conference Proceedings Improved Electrical Characteristics of MOS Devices with Ultrathin Gate Oxide Grown by Chemical Oxidation

B.J. Kailath, A. DasGupta, N. DasGupta

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12