Suppression of the Floating Body Effect with SiGe Source Structure for Fully Depleted 501 MOSFETs

Suppression of the Floating Body Effect with SiGe Source Structure for Fully Depleted 501 MOSFETs

Author(s):

Publication title:

Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2001-3

Pub. Year:

2001

Page(from):

239

Page(to):

244

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773096 [1566773091]

Language:

English

Call no.:

E23400/2001-3

Type:

Conference Proceedings

Details

TDL ID:	ZA00014007
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
Conf. info. (Number):	10th : 199th
Conf. info. (Venue):	Washington D.C., USA
Conf. info. (Date):	2001.03.25-2001.03.29

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