Relaxed SiGe On Insulator Fabricated via Wafer Bonding and Layer Transfer: Etch-back and Smart-cut Alternatives | 東京工業大学附属図書館文献データベース

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Relaxed SiGe On Insulator Fabricated via Wafer Bonding and Layer Transfer: Etch-back and Smart-cut Alternatives

Author(s):

Fitzgerald, E.A.

Antoniadis, D.A.

Publication title:

Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2001-3

Pub. Year:

2001

Page(from):

27

Page(to):

32

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773096 [1566773091]

Language:

English

Call no.:

E23400/2001-3

Type:

Conference Proceedings

Details

TDL ID:	ZA00014007
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
Conf. info. (Number):	10th : 199th
Conf. info. (Venue):	Washington D.C., USA
Conf. info. (Date):	2001.03.25-2001.03.29

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