Growth of GaN And Gal-xMnxN Single Crystals *
- Author(s):
- Publication title:
- III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 2001-1
- Pub. Year:
- 2001
- Page(from):
- 92
- Page(to):
- 103
- Pages:
- 12
- Pub. info.:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773072 [1566773075]
- Language:
- English
- Call no.:
- E23400/2001-1
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
GROWTH OF HIGH-RESISTIVITY WURTZITE AND ZINCBLENDE STRUCTURE SINGLE CRYSTAL GaN BY REACTIVE-ION MOLECULAR BEAM EPITAXY
Materials Research Society |
SPIE-The International Society for Optical Engineering |
8
Conference Proceedings
Spatial Distribution of Electron Concentration and Strain in Bulk GaN Single Crystals - Relation to Growth Mechanism
MRS - Materials Research Society |
3
Conference Proceedings
Valency change of active and nonactive ions inside oxide single crystals applied in optoelectronic devices
SPIE - The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
Trans Tech Publications |
Materials Research Society |
MRS - Materials Research Society |
11
Conference Proceedings
Application of the Smooth Genetic Algorithm for Indexing Powder Patterns-Tests for the Orthorhombic System
Trans Tech Publications |
MRS - Materials Research Society |
12
Conference Proceedings
A family of asymmetric profile functions for use in X-ray and neutron powder diffractometry
Trans Tech Publications |