Reduction of Threading Dislocations and Residual Strain in GaN Grown by Molecular Beam Epitaxy Using RF-Plasma Nitrogen on Sapphire *

Reduction of Threading Dislocations and Residual Strain in GaN Grown by Molecular Beam Epitaxy Using RF-Plasma Nitrogen on Sapphire *

Author(s):

Publication title:

III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2001-1

Pub. Year:

2001

Page(from):

13

Page(to):

18

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773072 [1566773075]

Language:

English

Call no.:

E23400/2001-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00014005
Series ID:	PA00000028
Conf. info. (Name):	Symposium on III-Nitride Based Semiconductor Electronic and Optical Devices ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
Conf. info. (Number):	3rd ; 34th ; 199th
Conf. info. (Venue):	Washington, D.C., USA
Conf. info. (Date):	2001.03.25-2001.03.30

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