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Use of 120℃ n+ μc-Si:H in Low Temperature TFT Fabrication

Author(s):
Publication title:
Thin Film Transistor Technologies V : proceedings of the International Symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-31
Pub. Year:
2000
Page(from):
54
Page(to):
62
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772983 [1566772982]
Language:
English
Call no.:
E23400/200031
Type:
Conference Proceedings

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